View 6MBP75TEA120_159447.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

6MBP75TEA120
Econo IPM series
Features
* Temperature protection provided by directly detecting the junction temperature of the IGBTs * Low power loss and soft switching * High performance and high reliability IGBT with overheating protection * Higher reliability because of a big decrease in number of parts in built-in control circuit
www..com
1200V / 75A 6 in one-package
Maximum ratings and characteristics
Absolute maximum ratings(at Tc=25C unless otherwise specified)
Item Bus voltage DC Surge Short operating Symbol VDC VDC(surge) VSC VCES IC ICP -IC PC VCC Vin Iin VALM IALM Tj Topr Tstg Tsol Viso Rating Min. Max. 0 0 400 0 -0.5 -0.5 -0.5 -20 -40 900 1000 800 1200 75 150 75 368 20 Vcc+0.5 3 Vcc 20 150 100 125 260 AC2500 3.5 Unit V V V V A A A W V V mA V mA C C C C V N*m
Collector-Emitter voltage *1 Collector current
Inverter
DC 1ms DC Collector power dissipation One transistor *3 Supply voltage of Pre-Driver *4 Input signal voltage *5 Input signal current Alarm signal voltage *6 Alarm signal current *7 Junction temperature Operating case temperature Storage temperature Solder temperature *8 Isolating voltage (Terminal to base, 50/60Hz sine wave 1min.) Screw torque Mounting (M5)
Note *1 : Vces shall be applied to the input voltage between terminal P and U or V or W, N and U or V or W *2 : 125C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.61/(75 x 2.0) x 100>100% *3 : Pc=125C/IGBT Rth(j-c)=125/0.34=368W [Inverter] *4 : VCC shall be applied to the input voltage between terminal No.4 and 1, 8 and 5, 12 and 9, 14 and 13 *5 : Vin shall be applied to the input voltage between terminal No.3 and 1, 7 and 5, 11 and 9, 16,17,18 and 13. *6 :VALM shall be applied to the voltage between terminal No.2 and 1, No6 and 5, No10 and 9, No.19 and 13. *7 : IALMshall be applied to the input current to terminal No.2,6,10 and 19. *8 : Immersion time 101sec.
6MBP75TEA120
Electrical characteristics (at Tc=Tj=25C, Vcc=15V unless otherwise specified.) Main circuit
Item Collector current at off signal input Collector-Emitter saturation voltage Forward voltage of FWD Symbol ICES VCE(sat) VF ton toff trr Condition VCE=1200V Vin terminal open. Ic=75A Terminal Chip -Ic=75A Terminal Chip VDC=600V,Tj=125C IC=75A Fig.1, Fig.6 VDC=600V, IF=75A Fig.1, Fig.6 Min. 1.2 Typ. 2.2 1.6 -
IGBT-IPM
Max. 1.0 3.1 2.0 3.6 0.3
Unit mA V V s
Turn-on time Turn-off time Reverse recovery time
Inverter
Control circuit
Item Supply current of P-line side pre-driver(one unit) Supply current of N-line side pre-driver Input signal threshold voltage (on/off) Input zener voltage Alarm signal hold time Symbol Iccp ICCN Vin(th) VZ tALM Condition Switching Frequency : 0 to 15kHz Tc=-20 to 125C Fig.7 ON OFF Rin=20k ohm Tc=-20C Fig.2 Tc=25C Fig.2 Tc=125C Fig.2 Alarm terminal Min. Typ. Max. Unit mA mA V V V ms ms ms ohm 15 45 1.00 1.35 1.70 1.25 1.60 1.95 8.0 1.1 2.0 4.0 1425 1500 1575
Current limit resistor
RALM
Protection Section ( Vcc=15V)
Item Over Current Protection Level of Inverter circuit Over Current Protection Delay time SC Protection Delay time IGBT Chip Over Heating Protection Temperature Level Over Heating Protection Hysteresis Under Voltage Protection Level Under Voltage Protection Hysteresis Symbol IOC tDOC tSC TjOH TjH VUV VH Condition Tj=125C Tj=125C Tj=125C Fig.4 Surface of IGBT chips Min. 113 150 11.0 0.2 Typ. 5 20 0.5 Max. 8 12.5 Unit A s s C C V V
Thermal characteristics( Tc=25C)
Item Junction to Case thermal resistance *9 Case to fin thermal resistance with compound *9 : (For 1 device, Case is under the device) Inverter IGBT FWD Symbol Rth(j-c) Rth(j-c) Rth(c-f) Min. Typ. 0.05 Max. 0.34 0.61 Unit C/W C/W C/W
Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)
Item Common mode rectangular noise Common mode lightning surge Condition Pulse width 1s, polarity ,10minuets Judge : no over-current, no miss operating Rise time 1.2s, Fall time 50s Interval 20s, 10 times Judge : no over-current, no miss operating Min. 2.0 5.0 Typ. Max. Unit kV kV
Recommendable value
Item DC Bus Voltage Operating Supply Voltage of Pre-Driver Screw torque (M5) Symbol VDC VCC Min. 13.5 2.5 Typ. 15.0 Max. 800 16.5 3.0 Unit V V Nm
Weight
Item Weight Symbol Wt Min. Typ. 270 Max. Unit g
6MBP75TEA120
Vin
Vin(th) On Vin(th) 90% 50%
IGBT-IPM
trr
Ic
90% 10% ton toff
Figure 1. Switching Time Waveform Definitions
/Vin Vge (Inside IPM ) Fault (Inside IPM )
off on Gate On Gate Off on off
normal alarm tALM > Max. 1 tALM >
Max.
/ALM
2
t ALM 2ms(typ.) 3
Fault : Over-current,Over-heat or Under-voltage
Figure 2. Input/Output Timing Diagram
tsc
Ic IALM
Ic IALM
Ic IALM
Figure.4 Definition of tsc
Vcc
20 k
DC 15V
HCPL 4504
P P IPM IPM
L
+ +
DC 300V 600V
Vin GND
VccU DC 15V
SW1 20k
P IPM U V
CT
N
Ic
VinU GNDU Vcc 20k VinX
SW2
Figure 6. Switching Characteristics Test Circuit
AC200V AC400V
+
Icc A Vcc P IPM Vin P.G +8V fsw GND N V W U
DC 15V
W
4700p
GND
N
Noise
DC 15V
Earth
Cooling Fin
Figure 5. Noise Test Circuit
Figure 7. Icc Test Circuit
6MBP75TEA120
Block diagram
P VccU VinU AL MU GNDU Vcc V VinV AL MV GNDV VccW VinW AL MW GNDW Vcc VinX
4 3 2
IGBT-IPM
Pre- Driver
R ALM 1.5k
1
Vz U
8 7 6
Pre- Driver
R ALM 1.5k
5
Vz V
12
11 10
Pre- Driver
R ALM 1.5k
9
Vz W
14 16
Pre- Driver
Vz GND
13
VinY
17
Pre- Driver
Vz
Pre-drivers include following functions 1.Amplifier for driver
Pre- Driver
VinZ
18
2.Short circuit protection 3.Under voltage lockout circuit
NC
B
Vz
4.Over current protection 5.IGBT chip over heating protection
VinDB AL M
15 19
NC
R ALM 1.5k N
Outline drawings, mm
Package type : P622 Dimensions in mm
M BCFM
Mass : 270g
6MBP75TEA120
Characteristics
Control circuit characteristics (Representative)
IGBT-IPM
Power supply current vs. Switching frequency Tc=125C (typ.)
50 Power supply current : Icc (mA) Input signal threshold voltage : Vin(on),Vin(off) (V) P-side N-side
Vcc=17V
Input signal threshold voltage vs. Power supply voltage (typ.)
2.5
Tj=25C Tj=125C
40
2
} Vin(off)
1.5
30
Vcc=15V Vcc=13V
} Vin(on)
20
Vcc=17V Vcc=15V Vcc=13V
1
10
0.5
0 0 5 10 15 20 Switching frequency : fsw (kHz) 25
0 12
13 14 15 16 17 Power supply voltage : Vcc (V)
18
Under voltage vs. Junction temperature (typ.)
14 12 10 8 6 4 2 0 20 Under voltage hysterisis : VH (V) 40 60 80 100 120 140
Under voltage hysterisis vs. Jnction temperature (typ.) 1
Under voltage : VUVT (V)
0.8
0.6
0.4
0.2
0 20
Junction temperature : Tj (C)
40 60 80 100 120 Junction temperature : Tj (C)
140
Alarm hold time vs. Power supply voltage (typ.)
3 Over heating protection : TjOH (C) OH hysterisis : TjH (C) Alarm hold time : tALM (mSec) 2.5 Tc=100C 2 1.5 1 0.5 0 12 Tc=25C 200
Over heating characteristics TjOH,TjH vs. Vcc (typ.)
TjOH 150
100
50 TjH 0 12
13
14
15
16
17
18
Power supply voltage : Vcc (V)
13 14 15 16 17 Power supply voltage : Vcc (V)
18
6MBP75TEA120
Main circuit characteristics (Representative)
IGBT-IPM
Collector current vs. Collector-Emitter voltage (typ.) Tj=25C(Chip)
150 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) 4
Vcc=17V Vcc=15V
Collector current vs. Collector-Emitter voltage (typ.) Tj=25C(Terminal)
150 Collector Current : Ic (A) 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V) 4
Vcc=15V
Collector Current : Ic (A)
Vcc=17V Vcc=13V
Vcc=13V
Collector current vs. Collector-Emitter voltage (typ.) Tj=125C(Chip)
150 Collector Current : Ic (A)
Collector current vs. Collector-Emitter voltage (typ.) Tj=125C(Terminal)
150 Collector Current : Ic (A) 125 100
Vcc=17V
125 100 75 50 25 0 0 0.5 1 1.5 2 2.5
Vcc=15V Vcc=17V Vcc=13V
Vcc=15V
75 50 25 0
Vcc=13V
3
3.5
4
0
Collector-Emitter voltage : Vce (V)
0.5 1 1.5 2 2.5 3 3.5 Collector-Emitter voltage : Vce (V)
4
Forward current vs. Forward voltage (typ.) (Chip)
150 125 Forward Current : If (A) 25C 100 125C 75 50 25 0 0 0.5 1 1.5 2 2.5 Forward voltage : Vf (V) Forward Current : If (A)
Forward current vs. Forward voltage (typ.) (Terminal)
150 125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 Forward voltage : Vf (V) 25C 125C
6MBP75TEA120
IGBT-IPM
Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=25 C
Switching loss : Eon,Eoff,Err (mJ/cycle)
35 30 25 Eon 20 15 10 5 Err 0 0 25 50 75 100 125 Eoff
Switching Loss vs. Collector Current (typ.) Edc=600V,Vcc=15V,Tj=125C
Switching loss : Eon,Eoff,Err (mJ/cycle) 35 30 25 20 15 10 5 0 0 25 50 75 100 125 Err Eoff Eon
Collector current : Ic (A)
R e ve rs ed bias ed sa fe ope ra ting a re a Vc c=1 5V, Tj<= 125 C (min .)
70 0
Collector current : Ic (A)
Transient therm al resistance (max.)
Thermal res istance : Rth(j-c) (C/W )
60 0
1 FW D
50 0
C ollecto r curre nt : Ic (A)
IGBT
40 0 S CSO A (non-repetitive pulse)
30 0
0.1
20 0
10 0 R BSO A (R epe titive puls e) 0 0 20 0 400 60 0 800 1 00 0 1200 140 0
0.01 0.001 0.01 0.1 1
C ollector-Emitte r voltage : V c e ( V)
Pulse w idth :Pw (sec )
Power derating for IGBT (max.) (per device)
500 Collecter Power Dissipation : Pc (W) Collecter Power Dissipation : Pc (W) 250
Power derating for FWD (max.) (per device)
400
200
300
150
200
100
100
50
0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C)
0 0 20 40 60 80 100 120 140 160 Case Temperature : Tc (C)
6MBP75TEA120
IGBT-IPM
Switching tim e vs. Collector current (typ.) Edc=600V,Vcc=15V,Tj=25 C
10000
Switching tim e vs. Collector current (typ.) Edc=600V,Vcc=15V,Tj= 125 C
10000
Switching time : ton,toff,tf (nSec )
Switching time : ton,toff,tf (nSec )
toff
toff 1000 ton
1000
ton
100 tf
100 tf
10 0 20 40 60 80 100 Collector current : Ic (A) 120 140
10 0 20 40 60 80 100 120 140 Collector current : Ic (A)
Reverse recovery characteristics (typ.) trr,Irr vs.IF
trr125C Reverse recovery current:Irr(A) Reverse recovery time:trr(nsec)
100
trr25C Irr125C Irr25C
10
1 0 20 40 60 80 100 Forward current:IF(A) 120 140

▲Up To Search▲

Price & Availability of 6MBP75TEA120

	To Download 6MBP75TEA120 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .